Vapor–Solid–Solid Growth of NiSi$_2$ Nanocrystals for Memory Application

NiSi
₂
nanocrystals were synthesized by vapor-solid-solid process, introducing SiH
₄
onto Ni catalyst dots on a SiO
₂
substrate, for nonvolatile memory applications. Electron microscopy was used to characterize the morphology and X-ray photoelectron spectroscopy characterization confirmed the nature of these NiSi
₂
nanocrystals. mosfet memory with NiSi
₂
nanocrystal as floating gate was fabricated and fast programming/erasing speed, long retention, and 10
⁵
times of operation endurance performances were demonstrated.