Ultralow-Voltage Transparent $\hbox{In}_{2} \hbox{O}_{3}$ Nanowire Electric-Double-Layer Transistors

Fully transparent In
₂
O
₃
nanowire transistors gated by LiCl-incorporated SiO
₂
-based solid electrolytes are fabricated on glass substrates at room temperature. Ultralow-voltage (0.4 V) operation of such a device is realized due to the extremely large electric-double-layer (EDL) capacitance (8.93 at 20 Hz) of the composite solid electrolyte. The subthreshold slope and equivalent field-effect mobility of the transparent nanowire EDL transistors are estimated to be 70 mV/dec and 739.7 , respectively. Such ultralow-voltage transparent nanowire transistors are promising for portable invisible sensors.