A Novel Operation Scheme for Oxide-Based Resistive-Switching Memory Devices to Achieve Controlled Switching Behaviors

A new operation scheme on oxide-based resistive-switching devices [resistive random access memory (RRAM)] is proposed to improve the controllability of switching processes in order to achieve an improved memory performance. The improved device-to-device and cycle-to-cycle uniformity, reduced RESET current, and adjustable R
_HRS
/R
_LRS
ratio are demonstrated in the HfO
_x
-based RRAM devices by using the new operation scheme, indicating the validity of the new operation scheme. The physical mechanism accounting for the new operation scheme effect is discussed.