Very high performance non-volatile memory on flexible plastic substrate

We report very high performance non-volatile memory on flexible plastic substrate, with ultra-low 5 μW switching power (1.6 μA at 3 V; -0.5 nA at -2 V), excellent 10⁵ cycling endurance, large on/off retention memory window >;10² even at 85°C, and fast 50 ns switching for the first time. These were achieved using Ni/GeO_x/HfON/TaN RRAM on low cost plastic that has simple MIM structure, low cost electrodes and covalent-bond-dielectric/metal-oxide.