Spatially-discriminating trap characterization methods for HEMTs and their application to RF-stressed AlGaN/GaN HEMTs

New constant drain-current deep level optical/transient spectroscopy (CI
_D
-DLTS/DLOS) methods to quantify trap energies and concentrations in AlGaN/GaN high electron mobility transistors (HEMTs) are described. These methods are applied to RF stressed HEMTs to characterize the impact of stressing on traps and identified a significant increase in virtual gate related levels.