A forming-free WOx resistive memory using a novel self-aligned field enhancement feature with excellent reliability and scalability

A thorough study of the switching mechanism for WO
_X
ReRAM gives clues about how to improve its performance and reliability. Consequently, a 60 nm WO
_X
ReRAM is achieved with excellent characteristics - 50ns fast switching, 10
⁶
cycling endurance, large MLC window, low read disturb of >; 10
⁹
, and excellent 150°C/2,000Hrs data retention. Furthermore, the oxidation of the TiN barrier into an insulating TiNO
_X
causes the WO
_X
to protrude above the remaining TiN and thus creates field enhancement. The boosted electric field eliminates the need for an initial forming step.