PBTI mechanisms in La containing Hf-based oxides assessed by very Fast IV measurements

PBTI in La-doped HfSiON/TiN stacks is investigated using Ultra Fast IV measurements. Excellent PBTI lifetime of these oxides is demonstrated. We also show that PBTI is explained only by trapping in stress induced defects and not by trapping in pre-existing ones. Dependence on oxide field, temperature activation and recovery of PBTI are also investigated and modeled.