Impact of DIBL variability on SRAM static noise margin analyzed by DMA SRAM TEG

The static noise margin (SNM) as well as V
th
, g
m
, body factor, and drain-induced-barrier-lowering (DIBL) in individual transistors in SRAM cells are directly measured by 16k bit device-matrix-array (DMA) SRAM TEG. It is found that, besides V
th
variability, DIBL variability degrades SRAM stability and its V
dd
dependence while the variability of g
m
and body factor has only a small effect.