Extremely-thin-body InGaAs-on-insulator MOSFETs on Si fabricated by direct wafer bonding

We have demonstrated extremely-thin-body (ETB) (3.5 and 9 nm) InGaAs-on-insulator (InGaAs-OI) MOSFETs on Si substrates with Al
₂
O
₃
ultrathin buried oxide (UTBOX) layers fabricated by direct wafer bonding (DWB). We have found that the ETB highly-doped InGaAs-OI n-channel MOSFETs without p-n junction can perform a normal MOSFET operation under front- and back-gate configuration and the double-gate operation can provide excellent on-current/off-current (I
_on
/I
_off
) properties of ~10
⁷
and the improved S factor even for InGaAs-OI MOSFETs with N
_D
of 1×10
¹⁹
cm
^-3
.