Fast $V_{\rm TH}$ Transients After the Program/Erase of Flash Memory Stacks With High-$k$ Dielectrics

A fast response technique is developed to investigate the short-term postprogram and post-erase discharge in Flash memory devices. The procedure is based on fast V
_TH
-evaluation methods developed for bias temperature instability and provides the transient characteristics after 20 ms under the program or erase conditions. The following different structures are investigated: 1) SiO
₂
/high-k stacks; 2) charge trap memories; 3) and floating gate memories. Dielectrics targeted for Flash memory applications are used as charge trap layers and interpoly di electrics. In this paper, we show results on Al
₂
O
₃
, DyScO, GdScO, and hexagonal and perovskite LuAlO. The postprogram and post-erase curves hold useful information about the dielectric properties and are used as a fast screening technique for alternative materials.