Sol-Gel processed high performance metal oxide thin-film transistors for low-cost and transparent electronics

We report on the use of sol-gel-processed amorphous oxides based on a (Zn
x
Sn
y
)O
z
composition to develop thin-film transistors (TFTs) with electron mobility exceeding 1 cm
²
/Vs and high on/off ratios (>10
⁶
). These devices are aided by a high K dielectric developed by CSIRO, which enables reduced operating voltages to be achieved.