Front-end electronics integrated on high resistivity semiconductor radiation detectors

Two different front-end FETs integrated on high-resistivity silicon detectors are presented: an implanted n-type JFET and a p-type JFET. These devices use different mechanisms to discharge the detector leakage current and the signal charge through the transistors electrodes. The two transistors have been integrated in the anode region of a semiconductor drift detector and tested experimentally. Spectroscopy measurements, also shown in the paper, have been made in order to determine the characteristic noise parameters of the transistors and to compare the performances of the two solutions.