3–10GHz CMOS distributed amplifier low-power and low-noise and high-gain low noise amplifier for UWB systems

This study presents a 3-10GHz ultra-wideband low-noise amplifier (UWB LNA) with CMOS distributed amplification,(DA) featuring low power consumption, flat response, high gain (S
₂₁
), and low noise figure (NF). The DA UWB LNA is designed with standard 0.18μm CMOS technology. Low power consumption, flat and high gain (S
₂₁
) were achieved through the use of a proposed two stage DA, and current-reused technique with a peaking inductor. An RL terminating network for the gate transmission line, and an under-damped Q-factor for second-order NF frequency response achieved a flat response and, low noise figure (NF). The LNA achieved S
₂₁
of 19.8±1.2 dB and an average NF of 3.4±0.36 dB with power dissipation (PD) of only 14.8 mW.