Planar 6H-SiC MESFETs with vanadium implanted channel termination

We use vanadium ion implantation to form a highly resistive surface layer in the wide bandgap semiconductor silicon carbide (SiC). MESFETs are successfully fabricated using this highly resistive layer to isolate gate metal extensions along the channel width from the p-type epilayer. Fabrication and characterization of these devices are described in this paper.