Plasma chemical etching of silicon in chlorine to containing plasma, used in nanoelectronics

It is experimentally confirmed that transition a topokinetic stage plasma of chemical etching of silicon in diffusion occurs around a maximum of dependence of speed of etching from the oxygen maintenance in plasma CF
₂
Cl
₂
/O
₂
. The load effect is studied. Results of article well correlate with the data received in the reactor of high density plasma TCP 2300 Versys Kiyo LAM Research corporations.