$C$– $V$ Characteristics in Undoped Gate-All-Around Nanowire FET Array

Presented in this letter are the
C
-
V
data, measured from nanowire capacitors, which have been fabricated by connecting in parallel a large number of identically processed nanowire FETs. The
C
-
V
curves were examined over a range from accumulation to inversion with varying frequencies and at different electrode configurations. The gate response of the undoped and floating channel is investigated using
C
-
V
data, and the inversion charge and carrier mobility are accurately extracted by eliminating the effects of parasitic capacitances and series resistance
R
_sd
. These observed data are compared with the data from planar MOS capacitor.