Properties of Hf0.7Zr0.3O2 thin films chemical vapor deposited using a single-source precursor of anhydrous HfxZr1−x(NO34 precursors

Hafnium-based dielectrics have been extensively investigated as a possible replacement for SiO
₂
. Anhydrous Hf/Zr mixed-metal nitrate precursor Hf
_x
Zr
_1-x
(NO
₃
)
₄
(HZN) was successfully synthesized and hafnium zirconate (Hf
_x
Zr
_1-
O
₂
) thin films were prepared by the chemical vapor deposition (CVD) technique from this precursor. The basal dielectric properties of Hf
_x
Zr
_1-
O
₂
films were studied, and C-V curves with negligible hysteresis are achieved.