Electrical and testing reliability of CuxO based RRAM

This work studies the electrical and testing reliability issues of Cu
_x
O based RRAM (Resistive Random Access Memory). Firstly, we study the most important electrical reliability issue-data retention capability, and propose a filament/charge trap combined model to clarify the retention failure mechanism. Secondly, we respectively study the reliability problems caused by the SET compliance current in 1R-architecture and 1T1R-architecture devices during the electrical testing, and observe the compliance current overshoot phenomenon for the first time in 1R-architecture device by using a self-build compliance current capturing system.