A novel CMOS inverter composed of a junctionless NMOSFET and a gated N−-N-N+ transistor for ULSI applications

In this paper, a novel non-classical CMOS inverter with simple process and high integration density is proposed, which is composed of a junctionless NMOSFET and a gated N
^-
-N-N
⁺
transistor for driver and load, respectively. Also, the gated N
^-
-N-N
⁺
transistor performance is also investigated. Based on the numerical simulations, we find out that the carrier mobility of the gated N
^-
-N-N
⁺
transistor is enhanced significantly. Besides, the layout area of the novel CMOS inverter are reduced more than 46.1% because of its unique shared contacting for output node, when compared with the conventional layout area.