3-D simulation of a 45 nm Partially Depleted silicon on insulator (SOI) transistor with diamond-shaped body contact

The improvement in output conductance of a 45 nm Partially Depleted (PD) SOI MOSFET with diamond-shaped body contact (DSBC) is shown. The results of 3-D simulations of current drive and body potential for the conventional and DSBC devices demonstrate suppression of floating body effects. DSBC device was compared with conventional body contacted structure and a reduction of small-signal output conductance (g
_ds
) by 24% was observed. The transition frequency of output conductance related to the body resistance (R
_body
) in a DSBC structure is increased by 2.4 times of its value in conventional body contacted transistor. These improvements represent superior intrinsic gain of the DSBC SOI MOSFET in higher frequencies in comparison with conventional body contacted device.