Fabrication of novel high frequency and high breakdown InAlAs-InGaAs pHEMTs

This paper presents a Novel low noise, high breakdown InAlAs/InGaAs pseudomorphic High Electron Mobility Transistors (pHEMTs). The improvements in breakdown voltage are brought about by a judicious combination of epitaxial layer design and field plate techniques. No significant degradations of DC and RF characteristics are observed for devices with field plate structures. An outstanding improvement in breakdown voltages of >30% is attained by field plate devices which should allow their usage in efficient high-added power efficiency amplifiers design.