Reactive ion etching of AlxGa1−xN/GaN heterostructure using Cl2, BCl3/Ar gas plasma

The etching processes were carried out in Oxford Instruments Plasmalab80Plus system. Present work is concentrating on discussion of a scope of different Al
_x
Ga
_1-x
N/GaN heterostructures in relation to percentage composition of aluminum. The topography of heterostructure surface and slope was controlled using AFM technique.