The influence of gate-induced drain leakage current by DC-stress on p-MOSFET scaling

The gate-induced drain leakage (GIDL) current due to electron/hole trapping and /spl Delta/D/sub it/ generation in MOSFETs, which has appeared as an additional constraint in scaling down MOSFET devices. The band to band (B-B) tunneling and band to defect (B-D) tunneling of boundary at constant gate-drain voltage (|V/sub gd/|) are decreased under increasing stress time. Searching for a part of interface trap density (/spl Delta/D/sub it/) with threshold voltage shift, it is pressured under on-state stress (Vg/spl ges/Vd/2, Vg