Novel Ga/sub 0.47/In/sub 0.53/As metal-semiconductor-metal photodetectors grown by metalorganic vapor phase epitaxy

InP-Ga/sub 0.47/In/sub 0.53/As-InP metal-semiconductor-metal photodetectors grown with an additional barrier enhancement layer of Al/sub 0.1/In/sub 0.9/P exhibited a reduction of leakage current and an increase in breakdown voltage. The devices had a DC responsivity of 0.32 A/W and an intrinsic response faster than 74 ps at 1.3 /spl mu/m.