Comparison and generalization of recent surface potential models for fully depleted SOI MOSFETs

Recent surface potential models for fully depleted SOI MOSFETs are compared. The parabolic potential approach is clarified to be a special case of the quasi-2D approach. The earlier quasi-2D model is generalized by relating the front and back surface potentials in a physically consistent way to make the model scaleable and applicable to all kinds of fully depleted SOI MOSFETs, and a unified expression of threshold voltage reduction is derived.