1.5 mu m GaInAsP/InP distributed reflector (DR) lasers with SCH structure

The large differential quantum efficiency eta /sub df/ with one-directional output operation obtained in 1.5- mu m distributed reflector (DR) lasers using a thin active layer of 50 nm and the separate-confinement heterostructure (SCH) structure is discussed. eta /sub df/ of the DR laser was experimentally determined to be twice that of distributed-feedback (DFB) lasers cleaved from the same wafer, which indicates high efficiency and high power characteristics of DR lasers.<
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