Two-Dimensional Analytical Model for Concentration Profiles of Aluminum Implanted Into 4H-SiC (0001)

A 2-D model of aluminum-ion implantation into 4H-SiC (0001) was developed and assessed through reverse current I
_R
-voltage V
_R
characteristics of p-n diodes. The model was based on a Monte Carlo simulation using a binary-collision approximation. For a moderate dose (10
¹¹
- 10
¹³
cm
^-2
), simulated isoconcentration contours were independent of the orientation of the masking edge. This condition allowed us to extract lateral straggling by expressing the lateral-concentration profiles as a 1-D dual-Pearson distribution function multiplied by a Gaussian distribution function. To demonstrate its applicability to higher doses, the model was applied in the simulation of a 4H-SiC p-n diode whose anode was formed by a 4 × 10
¹⁴
cm
^-2
aluminum implant into a moderately n-type doped (N
_D
= 9 × 10
¹⁵
cm
^-3
) drift layer. The I
_R
-V
_R
characteristics calculated with the model were found to agree with the measured ones, suggesting that the developed model is appropriate for designing 4H-SiC power devices, including not only a p-type region with moderate aluminum implant but also a p-type region with a heavy aluminum implant on the condition that N
_D
is sufficiently high.