Parameter correlation and modeling of the power-law relationship in MOSFET hot-carrier degradation

Correlation between the parameters A and n in the empirical hot-carrier degradation formula, parametric shift=A*t/sup n/, is reported for both n- and p-channel MOSFETs fabricated with various submicrometer processing technologies. Analysis of data indicates that A increases with a decreasing value of n, satisfying a simple exponential relationship, A= alpha *exp(- beta n), within the stress conditions considered. A phenomenological model to explain this relation is provided. Implications for device lifetime prediction under different hot-carrier injection stress conditions are also indicated.<
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