First achievement of Deep-UV LED on Si substrate

Deep-ultraviolet (DUV) light-emitting diodes (LEDs) have a wide range of potential applications such as sterilization, water purification, medicine and biochemistry, white light illumination, and so on. DUV-LED fabricating using silicon substrate is attractive as a low-cost DUV light-source, in near future. However, the realization of the LED on the Si substrate which is shorter than 300 nm is not reported till now. Quaternary InAlGaN alloy is attracting attention as candidate material for realizing high-efficiency DUV LEDs due to In incorporation effects. In this study, the authors demonstrated 280 nm-band InAlGaN QW DUV LEDs on Si (111) substrates.