Optimum design of delta -doped InGaAs avalanche photodiode by using quasi-ionization rates

An avalanche photodiode (APD) designed by using quasi-ionization rates in InP and InGaAs is described. The structure has a delta -doped layer in an InP window layer. The heterointerface electric field is investigated and determined to prevent the tunneling current and carrier multiplication in InGaAs. The gain bandwidth (GB) product of the delta -doped APD is analyzed by R.B. Emmons's (1967) p-i-n electric field method. The highest GB product is 160 GHz.<
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