Development of high efficiency p/sup +//n InP solar cells for hetero-epitaxial applications

We have developed high efficiency p/sup +//n/n/sup +/ homoepitaxial InP space solar cells with the intent of applying the technology to hetero-epitaxial InP cell growth on Ge or Si substrates. Our cell design eliminates the use of InGaAs contact layers under the front grid metallization. A p/sup +//n/n/sup +/ cell demonstrated a conversion efficiency of 16.2% under AM0, 1 sun, 25/spl deg/C conditions. Cell performance instabilities were observed as a function of aging and light soaking. Hydrogen incorporated during cool-down from OMVPE growth temperature may have been responsible for the observed instabilities. Conversion efficiency values exceeding 18% are expected with minor alterations to our cell design.