TCAD study of the impact of trigger element and topology on silicon controlled rectifier turn-on behavior

Silicon controlled rectifier (SCR) has a superior ESD performance in terms of power dissipation and saved area compared to classical MOSFET. In this paper, we present 3D TCAD simulations of SCR in CMOS 32nm node. This work focuses on the reduction of the triggering voltage due to the SCR turn-on.