A novel physical model for the SCR ESD protection device

The SCR (silicon controlled rectifier) is one of the most efficient ESD protection devices. In order to improve the accuracy, convergence, scalability, and the parameter extraction and support time, a new model was developed. It aims to reach its goals through a stronger relation between the physical phenomena and its constitutive equations. The compact model was validated in CMOS 40 nm and CMOS 130 nm technologies.