Developing GaN HEMTs for Ka-Band with 20W

AlGaN/GaN High Electron Mobility Transistors(HEMTs) were developed for Ka-band. The developed device showed 138 GHz of fmax, which depended on the thickness of the AlGaN barrier layer and the gate length. It had a 6.4 mm gate periphery on a metal carrier plate. The output power achieved 20 W with impedance matching circuits.