High-performance Enhancement-Mode In0.53Ga0.47As surface channels n-MOSFET with thin In0.2Ga0.8As capping and laser anneal effect

In this work we have investigated the effect of thin In
0.2
Ga
0.8
As capping layer and pulsed laser annealing (PLA) on self-aligned enhancement mode n-channel In
0.53
Ga
0.47
As metal-oxide-semiconductor field effect transistor (MOSFET). We present the electrical and material characteristics of TaN/ZrO
2
/In
0.2
Ga
0.8
As/In
0.53
Ga
0.47
As n-MOSFET with atomic layer deposition (ALD) ZrO
2
. Electrical characteristics with thin capacitance equivalent thickness (CET) (∼0.8 nm), and improved drain current with thin capping layer were obtained. N-channel high-k InGaAs-MOSFETs with good transistor behavior, i.e. improved drain current after additional pulsed laser anneal with RTA anneal, on In
0.53
Ga
0.47
As substrate have also been demonstrated.