Electrical properties of VOx bolometer thin films prepared by metal-organic decomposition

Well axis-oriented V
₂
O
₅
thin films were fabricated by MOD. V
₂
O
₅
films were reduced to VO
_x
films under a temperature of 530°C and pressures of 1.2-3.0 Pa in O
₂
. VO
_x
films indicated an abrupt transition around 55°C with a resistivity change of 3 orders and TCR of 2.1-2.2 %/K at 300 K.