High-Performance Silicon Nanowire Gate-All-Around nMOSFETs Fabricated on Bulk Substrate Using CMOS-Compatible Process

In this letter, a novel self-aligned CMOS-compatible method for the fabrication of gate-all-around silicon nanowire MOSFETs (GAA SNWFETs) on bulk substrate has been proposed. The fabricated SNWFET featuring 33-nm gate length and 7-nm diameter shows the highest driving current (
I
_on
= 2500 μA/μm at
V
_ds
=
V
_gs
= 1.0 V) among previously reported data and achieves high
I
_on
/
I
_off
ratio of 10
⁵
, lightening the promise for high performance and strong scalability of GAA SNWFETs. The process details and optimization procedure are extensively discussed.