SAW Devices Manufactured on GaN/Si for Frequencies Beyond 5 GHz

This letter describes the manufacture and characterization of surface acoustic wave (SAW) devices on GaN/Si devoted to applications above the 5-GHz frequency range. The SAW structures consist of two face-to-face interdigitated transducers (IDTs), placed at different distances. Using a TiAu metallization, 80-nm-thick and advanced e-beam lithographical techniques with IDTs with fingers and spacings 200 nm wide have been obtained on the GaN layer. On wafer measurement of the
S
parameters have demonstrated the operation at approximately 5.6 GHz. The frequency response of the devices is explained in detail.