Temperature error minimization in low dose radiation measurements with 140 nm MOS dosimeters

The possibility to track the threshold voltage shifts caused by ionizing radiation in MOS dosimeters in a Zero Temperature Coefficient reference current is studied. 140 nm gate oxide p-channel MOS transistors were irradiated with a high dose rate
⁶⁰
Co γ-source to characterize their sensitivity to radiation. Results show that the error introduced by temperature can be minimized in one order of magnitude if the ZTC reference current is applied, but that the error increases as the device is irradiated.