A New 20 V-Rated Buried-Oxide Trench-Gate Bipolar-Mode JFET FOR DC/DC Converters

A new normally-on buried-oxide (BOX) trench-gate bipolar-mode JFET (BTB-JFET) is reported for high-frequency low-voltage low-power-loss dc/dc converter applications. The BOX structure of the device is realized by localized thermal oxidation at the bottom of the gate trench. The fabricated BTB-JFET has a breakdown voltage of 21 V at V
_GS
= -3 V. Due to the BOX under the gate region, the gate-drain capacitance C
_GD
of the device is decreased by up to 30% at zero source-drain bias compared with that of the conventional trench-gate bipolar-mode JFET. The lower C
_GD
reduces the switching times and the voltage dips during turn-on and turn-off. The resistive turn-on and turn-off times of the device are decreased from 31.5 to 30 ns and 12 to 10.5 ns, respectively. This approximately provides a 5% reduction in t
_on
and 12% in t
_off
, which is in agreement with the simulation results.