Comparative Study of FinFET Versus Quasi-Planar HTI MOSFET for Ultimate Scalability

The FinFET is compared against the quasi-planar trigate bulk MOSFET with high-permittivity (high-
$k$
) dielectric trench isolation (HTI MOSFET) for low-standby-power applications, at dimensions near the end-of-roadmap (11-nm half-pitch). It is found that the optimal transistor structure depends on the fin aspect ratio (AR) and the HTI dielectric constant
$\varepsilon_{\rm HTI}$
: for sufficiently high
$\varepsilon_{\rm HTI}$
, the HTI MOSFET can provide comparable or lower delay as the FinFET, for AR up to
$\sim$
2.5. Thus, the development of high-
$k$
dielectric and/or high-AR fin formation technologies will ultimately determine which transistor design is more advantageous.