A proportional hazards approach to correlate SiO/sub 2/-breakdown voltage and time distributions

A new relationship for correlatingtime-to-breakdown and voltage-to-breakdown distributions is derived within the framework of proportional hazards models. The relationship is used to analyze the silicon dioxide breakdown data of D. Wolters, T. Hoogestyn, and H. Kraaij (WHK) (in The Physics of MOS Insulators, p.349-52, 1980). From the WHK data, the acceleration factor for every 1 MV/cm change in the applied electric field is estimated to be 10/sup 0.7/ at 300 degrees C. The relationship can be used to estimate quickly the electric-field acceleration factor, using the time-to-breakdown data measured at one fixed voltage and the voltage-to-breakdown data measured at a single voltage ramp rate.<
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