Comments on "A practical end-of-life model for semiconductor devices" [with reply]

Several observations are made on the above-named work by M.S. Ash and H.C. Gorton (see ibid., vol.38, no.4, p.485-93, Oct. 1989) concerning gradual performance deterioration in semiconductor devices. The commenter suggests that the development of predictive tools for reliability assessments involving long-term deterioration in such devices requires that careful attention be paid to the operational physics of the device, including temperature-dependent characteristics. An author's reply is included.<
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