Improved Optical and ESD Characteristics for GaN-Based LEDs With an $\hbox{n}^{-}\hbox{-GaN}$ Layer

Nitride-based light-emitting diodes (LEDs) with an n
^-
-GaN layer are proposed and fabricated. By providing a larger series resistance in the vertical direction, it was found that the n
^-
-GaN layer could enhance LED output intensity due to the enhanced current spreading. It was also found that LEDs with n
^-
-GaN layer thicknesses of 0.15, 0.2, and 0.25 μm could endure electrostatic discharge surges up to -1200, - 1800, and -3000 V, respectively.