A $\beta$ -$\hbox{Ga}_{2} \hbox{O} _{3}$ Solar-Blind Photodetector Prepared by Furnace Oxidization of GaN Thin Film

The authors report the growth of β-Ga
₂
O
₃
thin film by simple furnace oxidation of GaN thin film and the fabrication of a solar-blind β-Ga
₂
O
₃
photodetector (PD). For the PD with an active area of 4.4 mm
²
and 5-V applied bias, it was found that measured current was only 1.39 × 10
^-10
A in the dark and increased to 2.03 × 10
^-5
A when illuminated with 260-nm ultraviolet (UV) light (41.27 μW/cm
²
). It was also found that the fabricated PD exhibits an extremely large deep-UV-to-visible rejection ratio.