A study of the validity of capacitance-based method for extracting the effective channel length of MOSFET's

The capacitance-based method (C-V method) is a straightforward method for extracting the effective channel length of MOSFETs. This paper investigates the validity of such a method based on results simulated from a two-dimensional (2-D) device simulator. The effective channel length extracted from the C-V method is also compared with those obtained from other methods reported in the literature.