Entirely aluminum free 905-nm wavelength buried heterostructure laser by reactive ion etching and semi-insulating GaInP:Fe regrowth

Selective regrowth of semi-insulating Ga/sub 0.51/In/sub 0.49/P: Fe (resistivity /spl ap/1/spl times/10/sup 12/ /spl Omega/ cm) has been realized for the first time to fabricate entirely Al free buried heterostructure GaInP/GaInAsP/GaAs laser emitting at 905 mn. The fabrication procedure and the laser characteristics are presented,.