Reliability and degradation behaviors of semi-insulating Fe-doped InP buried heterostructure lasers fabricated by RIE and MOVPE

We clarified the degradation behaviors of semi-insulating buried heterostructure lasers in which mesa structures were fabricated by reactive ion etching (RIE) and then buried in semi-insulating Fe-doped InP grown by metal organic vapor phase epitaxy (MOVPE). The degradation rate and mode correlated with the quality of the buried heterostructure (BH) interface. Based on the correlation, a condition for highly stable semi-insulating Fe-doped InP buried heterostructure (SIBH) lasers was demonstrated and confirmed experimentally and statistically.