CMOS/SOS RAM transient radiation upset and "inversion" effect investigation

The Complementary Metal-Oxide-Semiconductor/Silicon-on-Sapphire Random Access Memory (CMOS/SOS RAM) transient upset and "inversion" effect were investigated with pulsed laser, pulsed voltage generator and low-intensity light simulators. It was found that the "inversion" of information occurs due to memory cell photocurrents simultaneously with the power supply voltage drop transfer to memory cells outputs.