Evaluation of Transient Behavior of Polysilicon-Bound Diode for Fast ESD Applications

Transient behaviors of poly-bound diodes subject to pulses generated by the very fast transmission line pulsing (VFTLP) tester are characterized for fast ESD events such as the charged device model. The effects of changing a diode's dimension parameters on the transient behaviors and on the overshoot voltage and turn-on time are studied. The correlation between the diode failure and polygate configuration under the VFTLP stress is also investigated.